Metallization on III-V Compound Semiconductor Surfaces
نویسندگان
چکیده
منابع مشابه
Phase transitions of III–V compound semiconductor surfaces in the MOVPE environment
The structure of gallium arsenide and indium phosphide (0 0 1) surfaces in the metalorganic vapor-phase epitaxy (MOVPE) environment has been investigated. During growth at V/III ratios in excess of 10, both materials are terminated with group V ad-dimers (As or P), alkyl groups and hydrogen atoms. These species sit on top of a complete layer of the group V atoms. As the V/III ratio decreases, t...
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ژورنال
عنوان ژورنال: Hyomen Kagaku
سال: 1981
ISSN: 0388-5321,1881-4743
DOI: 10.1380/jsssj.2.265